• DocumentCode
    3611768
  • Title

    Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits

  • Author

    Adell, Philippe C. ; Rax, Bernard ; Esqueda, Ivan S. ; Barnaby, Hugh J.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    2476
  • Lastpage
    2481
  • Abstract
    Soaked-hydrogen irradiations show the H2 limits for the total-dose and dose-rate response of bipolar technologies. We use an analytical model to extrapolate experimental observations and generate an H2 limits/dose-rate safe-operating-area for various total-dose conditions. Results indicate that 0.1% is the H2 limit that can impact device degradation. We also show that the impact is larger for higher dose levels and that extra care needs to be taken when qualifying electronics for specific missions.
  • Keywords
    bipolar analogue integrated circuits; hydrogen; H; hydrogen limits; linear bipolar circuits; soaked-hydrogen irradiations; Bipolar integrated circuits; Degradation; Hydrogen; Radiation effects; Semiconductor device packaging; Transistors; Bipolar; ELDRS; hydrogen contamination; packaging; total dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2500198
  • Filename
    7346510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3611768