• DocumentCode
    3611854
  • Title

    High-Efficiency CdZnTe Gamma-Ray Detectors

  • Author

    Bolotnikov, A.E. ; Ackley, K. ; Camarda, G.S. ; Cui, Y. ; Eger, J.F. ; De Geronimo, G. ; Finfrock, C. ; Fried, J. ; Hossain, A. ; Lee, W. ; Prokesch, M. ; Petryk, M. ; Reiber, J.L. ; Roy, U. ; Vernon, E. ; Yang, G. ; James, R.B.

  • Author_Institution
    Brookhaven Nat. Lab., Upton, NY, USA
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    3193
  • Lastpage
    3198
  • Abstract
    The longer electron lifetime of today´s CdZnTe (CZT) crystals allows for free carriers to travel longer distances in the crystals, which means that, in principle, thicker devices could be fabricated. These thicker CZT devices would offer greater detection efficiency for high-energy gamma-ray detectors. However, up to now, the thicknesses and sizes of actual detectors have still been limited by the nonuniform detector response, and the biggest devices reported in the literature are (20×20×15)-mm3 pixelated detectors with a drift distance of 15 mm. Although thicker and bigger single crystals are becoming available today, the high requirements on their crystal quality drastically reduce their acceptance yield and increase their cost. Fortunately, in many cases, the inhomogeneity in response can be corrected by segmenting the active volumes of the detectors and correcting the responses generated from each of the voxels. Such high-granularity position-sensitive detectors open up the opportunity for using thicker and less-expensive CZT crystals. The goal of this work is to demonstrate that today´s commercial high electron mobility-lifetime CZT material is suitable for a new class of detectors with 20-25-mm drift distances and even larger in the near future, provided that the detectors´ response nonuniformities can be corrected on a scale comparable to or larger than the sizes of the electron clouds, which is ~ 100 μm.
  • Keywords
    position sensitive particle detectors; semiconductor counters; CdZnTe crystals; distance 20 mm to 25 mm; drift distance; high-efficiency CdZnTe gamma-ray detectors; high-electron mobility-lifetime CZT material; high-energy gamma-ray detectors; high-granularity position-sensitive detectors; Crystals; Detectors; Gamma-ray detectors; Image quality; Nonhomogeneous media; CdZnTe; charge-loss correction; crystal defects; virtual Frisch-grid detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2493444
  • Filename
    7348747