Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

Author

Marcelot, O. ; Goiffon, V. ; Raine, M. ; Duhamel, O. ; Gaillardin, M. ; Molina, R. ; Magnan, P.

Author_Institution

Image Sensor Res. Team, Univ. de Toulouse, Toulouse, France

Volume

62

Issue

6

fYear

2015

Firstpage

2965

Lastpage

2970

Abstract

As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.

Keywords

CMOS image sensors; charge-coupled devices; radiation hardening (electronics); CCD; CMOS device; CMOS image sensor; DDD Effect; TID Effect; charge transfer inefficiency; dark current degradation; radiation effect; radiation hardness; time delay integration; CMOS image sensors; Charge coupled devices; Charge transfer; Radiation effects; CMOS image sensors (CIS); Charge; charge coupled devices; charge transfer; deep submicrometer process; radiation effects; transfer inefficiency; trapped charge;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2497405

Filename

7348799