• DocumentCode
    3611913
  • Title

    A Novel 65 nm Radiation Tolerant Flash Configuration Cell Used in RTG4 Field Programmable Gate Array

  • Author

    Jih-Jong Wang ; Rezzak, Nadia ; Dsilva, Durwyn ; Jia, James ; Cai, Alex ; Hawley, Frank ; McCollum, John ; Hamdy, Esmat

  • Author_Institution
    Microsemi-SOC, San Jose, CA, USA
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    3072
  • Lastpage
    3079
  • Abstract
    The newly introduced radiation-tolerant flash-based FPGA, RTG4, uses a novel configuration cell design composed of a NMOS switch controlled by a totem pole p-channel flash and n-channel flash construction. Its radiation tolerance is far superior to that in the present available Flash-based FPGA. This paper describes the radiation hardening by design (RHBD) process for the new flash-based configuration cell. A subtle and unique retention issue was found and resolved through studying physical mechanisms and conducting experiments.
  • Keywords
    MOS integrated circuits; field programmable gate arrays; radiation hardening (electronics); FPGA; NMOS switch; RTG4 field programmable gate array; n-channel flash; radiation hardening by design; radiation tolerant flash configuration cell; size 65 nm; totem pole p-channel flash; Field programmable gate arrays; Radiation hardening (electronics); Field programmable gate array; N-flash; P-flash; total ionizing dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2495262
  • Filename
    7348822