Resistive switching mechanism in printed non-volatile Ag/ZrO2/ITO sandwiched structure

The resistive switching mechanism in the printed sandwiched structures of Ag/zirconium oxide/indium tin oxide (ITO) is analytically demonstrated. The switching from the ON to OFF state of the fabricated device is attributed to the modulation of ohmic contact into opposite Schottky barriers following on from the electrochemical dissolution of the Ag filament from the weakest point near the ITO electrode and alteration of the Schottky barriers into an ohmic contact consequential to the reformation of the Ag filament during the transition of OFF into ON state. Physical current conduction governing laws verify the concluded transitions between ohmic contact and Schottky barriers.