DocumentCode
3612448
Title
Characterisation of SU-8 n -doping carbon nanotube-based electronic devices
Author
Al-Mumen, Haider
Author_Institution
Dept. of Electr. Eng., Univ. of Babylon, Babylon, Iraq
Volume
10
Issue
12
fYear
2015
Firstpage
670
Lastpage
673
Abstract
Triarylium-solphonium salt, the chemical component of the SU-8 photo resist, has been proved as an effective n-doping source for graphene. In this reported work, a study has been made of the effects of SU-8 on single walled carbon nanotube networks. The results indicate that SU-8 behaves as an electrons donor and causes an upward shift in the Fermi level. The cross-linking property of the SU-8 resembles an efficient isolator from the oxygen of the ambient. This leads to ambient-stability of this doping technique. In addition, the doping technique shows negligible defects on the CNT surface and then higher transconductance is expected to be achieved. The temperature dependence of the Raman spectra of the CNT network observed a downshift in the G-band with increasing temperature. Finally, since SU-8 is an e-beam sensitive resist as well as a photo resist, it was used to selectively dope CNTs within the substrate area.
Keywords
Fermi level; Raman spectra; carbon nanotubes; doping; photoresists; C; CNT surface; Fermi level; G-band; Raman spectra; SU-8 n-doping carbon nanotube-based electronic devices; SU-8 photo resist; ambient-stability; chemical component; cross-linking property; e-beam sensitive resist; electrons donor; graphene; n-doping source; single walled carbon nanotube networks; triarylium-solfonium salt; upward shift;
fLanguage
English
Journal_Title
Micro Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2015.0405
Filename
7358481
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