• DocumentCode
    3612448
  • Title

    Characterisation of SU-8 n-doping carbon nanotube-based electronic devices

  • Author

    Al-Mumen, Haider

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Babylon, Babylon, Iraq
  • Volume
    10
  • Issue
    12
  • fYear
    2015
  • Firstpage
    670
  • Lastpage
    673
  • Abstract
    Triarylium-solphonium salt, the chemical component of the SU-8 photo resist, has been proved as an effective n-doping source for graphene. In this reported work, a study has been made of the effects of SU-8 on single walled carbon nanotube networks. The results indicate that SU-8 behaves as an electrons donor and causes an upward shift in the Fermi level. The cross-linking property of the SU-8 resembles an efficient isolator from the oxygen of the ambient. This leads to ambient-stability of this doping technique. In addition, the doping technique shows negligible defects on the CNT surface and then higher transconductance is expected to be achieved. The temperature dependence of the Raman spectra of the CNT network observed a downshift in the G-band with increasing temperature. Finally, since SU-8 is an e-beam sensitive resist as well as a photo resist, it was used to selectively dope CNTs within the substrate area.
  • Keywords
    Fermi level; Raman spectra; carbon nanotubes; doping; photoresists; C; CNT surface; Fermi level; G-band; Raman spectra; SU-8 n-doping carbon nanotube-based electronic devices; SU-8 photo resist; ambient-stability; chemical component; cross-linking property; e-beam sensitive resist; electrons donor; graphene; n-doping source; single walled carbon nanotube networks; triarylium-solfonium salt; upward shift;
  • fLanguage
    English
  • Journal_Title
    Micro Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2015.0405
  • Filename
    7358481