• DocumentCode
    3612744
  • Title

    Charging efficiencies and heat resistance in three types of SiO2/Si3N4 electrets

  • Author

    Okubo, Norio ; Itoh, Taira ; Kidokoro, Kenichi ; Yasuno, Yoshinobu

  • Author_Institution
    Rion Co., Ltd., Tokyo, Japan
  • Volume
    22
  • Issue
    6
  • fYear
    2015
  • fDate
    12/1/2015 12:00:00 AM
  • Firstpage
    3663
  • Lastpage
    3667
  • Abstract
    Charging efficiencies and heat resistance of three types of silicon dioxide/silicon nitride double-layer electrets were investigated. These electrets were fabricated with SiO2 films deposited from SiH4 via plasma-enhanced chemical vapor deposition (PECVD SiO2) or with tetraethylorthosilicate (TEOS) using PECVD (TEOS SiO2) or were thermally grown SiO2. Electrets with thicker SiO2 films were found to have higher charging efficiencies and heat resistance than those with thinner SiO2 layers. Moreover, the expected lifetimes of the SiO2 electrets were significantly longer than that of a fluorinated ethylene propylene copolymer electret.
  • Keywords
    electrets; plasma CVD; semiconductor thin films; silicon compounds; PECVD; SiO2-Si3N4; TEOS; heat resistance; plasma-enhanced chemical vapor deposition; silicon dioxide-silicon nitride double-layer electret; tetraethylorthosilicate; Corona; Discharges (electric); Electrets; Films; Micromechanical devices; Resistance; Resistance heating; Electret; SiO2; plasma-enhanced chemical vapor deposition; tetraethylorthosilicate; thermal;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2015.004918
  • Filename
    7367568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3612744