• DocumentCode
    3612774
  • Title

    Comprehensive Circuit Failure Prediction for Logic and SRAM Using Virtual Aging

  • Author

    Yazdanbakhsh, Amir ; Balasubramanian, Raghuraman ; Nowatzki, Tony ; Sankaralingam, Karthikeyan

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    35
  • Issue
    6
  • fYear
    2015
  • Firstpage
    24
  • Lastpage
    36
  • Abstract
    This article develops a comprehensive technique for failure prediction in the field for many-core processors to address wear out in harsh environments for logic and static RAM (SRAM). The authors develop three principles. First, virtually aging a processor by momentarily reducing its voltage exposes wear-out failure. Second, sampled redundancy can be used to capture logic wear-out failures because their underlying fault model is delay faults, which makes them poorly suited for using test-vector-based techniques. Third, wear out on SRAMs decreases their noise margin, and the end results can be effectively modeled as a stuck-at fault, thus allowing asymmetric checkers like built-in self-test to work effectively. The authors´ design comprises two components (Aged-SDMR, which combines sampling and dual-modular redundancy, and Aged-AsymChk, which uses an asymmetric checker); has a simple implementation; and delivers low complexity, low overheads, and high accuracy. In addition to ensuring no corruptions or missed errors from wear-out failures, the full system predicts failures within 0.4 days for logic and within milliseconds for SRAM after their appearance. Furthermore, compared to SRAMs protected only with error-correcting code and decommissioned on first failure, the authors extend lifetime by 14 months on average.
  • Keywords
    SRAM chips; failure analysis; integrated circuit reliability; redundancy; SRAM; circuit failure prediction; error-correcting code; manycore processor; redundancy; static RAM; vector-based technique; virtual aging; Aging; Built-in self-test; Failure analysis; Fault tolerance; Logic gates; Predictive models; Program processors; SRAM cells; dual-modular redundancy; failure prediction; fault tolerance; reliability; sampling; wear out;
  • fLanguage
    English
  • Journal_Title
    Micro, IEEE
  • Publisher
    ieee
  • ISSN
    0272-1732
  • Type

    jour

  • DOI
    10.1109/MM.2015.136
  • Filename
    7367972