• DocumentCode
    3613381
  • Title

    Compact modeling for SiGe HBTs

  • Author

    S. Mijalkovic

  • Author_Institution
    Fac. of Inf. Technol. & Syst., Delft Univ. of Technol., Netherlands
  • Volume
    2
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    459
  • Abstract
    Compact modeling techniques that handle peculiar features of SiGe HBTs are presented and analyzed. An appropriate generalization of the Early factor is proposed. Numerical device simulation for two typical SiGe transistor structures with different dopant profiles and Ge mole fractions is used as a basis for the model evaluation.
  • Keywords
    "Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Semiconductor process modeling","Electron mobility","Charge carrier processes","Numerical simulation","Bipolar transistors","Microelectronics","Voltage"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003298
  • Filename
    1003298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3613381