DocumentCode
3613454
Title
(InGa)As/GaAs quantum-dot diode lasers for 1.3-/spl mu/m optical fibre communication
Author
M. Wasiak;R.P. Sarzala;T. Czyszanowski;P. Mackowiak;W. Nakwaski;M. Bugajski
Author_Institution
Inst. of Phys., Tech. Univ. Lodz, Poland
Volume
1
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
144
Abstract
The self-consistent optical-electrical-thermal-gain model of the oxide-confined edge-emitting diode laser has been used to simulate the room-temperature operation of the long-wavelength 1.3-/spl mu/m quantum-dot (InGa)As/GaAs diode laser. Validity of the model has been verified using some experimental results for comparison. An impact of quantum-dot density on laser operation characteristics as well as temperature dependence of lasing threshold have been discussed.
Keywords
"Gallium arsenide","Quantum dots","Diode lasers","Optical fiber communication","Laser modes","Optical resonators","Optical refraction","Optical variables control","Fiber lasers","Semiconductor lasers"
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2002. Proceedings of the 2002 4th International Conference on
Print_ISBN
0-7803-7375-8
Type
conf
DOI
10.1109/ICTON.2002.1009531
Filename
1009531
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