Multilevel beam SOI-MEMS fabrication and applications

A microfabrication technology has been developed and demonstrated, which enhances the capabilities and applications of high aspect ratio silicon-on-insulator microelectromechanical systems (SOI-MEMS) by enabling additional independent degrees of freedom of operation: both upward and downward vertical pistoning motion as well as bi-directional rotation. This is accomplished by applying multiple-mask high aspect ratio etches from both the front- and back-side of the SOI device layer, forming beams at different levels. The processes utilize four masks, two for front-side and two for back-side etching. As a result, single-crystal silicon beams with four different cross-sections are fabricated, and can be combined to form many additional beam cross-sections. By this methodology, unique high aspect ratio micromirror devices were demonstrated with fully isolated and accurately self-aligned vertical combdrives in the SOI device layer, with initial combfinger overlap. Examples of fabricated devices are given.