• DocumentCode
    3615314
  • Title

    Study of silicon plasma produced by nitrogen laser

  • Author

    S. Pleslic;Z. Andreic

  • Author_Institution
    Dept. of Appl. Phys., Zagreb Univ., Croatia
  • fYear
    2003
  • fDate
    6/25/1905 12:00:00 AM
  • Firstpage
    286
  • Lastpage
    289
  • Abstract
    Experimental investigation of laser-produced plasma of silicon is described in this work. Plasma was produced by nanosecond (6 ns) nitrogen laser pulses (337.1 nm) with maximal energy density of about 1.1 J/cm/sup 2/ and studied by UV-VIS spectroscopy. Electron density of the order of magnitude of 10/sup 18/ cm/sup -3/ and electron temperature of about 1.5 eV were achieved in produced plasma. Numerical modelling of target heating predicts 4-5 times higher electron temperature than experimentally determined ones. The optical depth of particular material is main parameter for plasma production.
  • Keywords
    "Silicon","Nitrogen","Plasma density","Plasma temperature","Electrons","Plasma materials processing","Optical pulses","Spectroscopy","Predictive models","Numerical models"
  • Publisher
    ieee
  • Conference_Titel
    Applied Electromagnetics and Communications, 2003. ICECom 2003. 17th International Conference on
  • Print_ISBN
    953-6037-39-4
  • Type

    conf

  • DOI
    10.1109/ICECOM.2003.1291010
  • Filename
    1291010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3615314