• DocumentCode
    3618642
  • Title

    Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications

  • Author

    R. Chau;M. Doczy;B. Doyle;S. Datta;G. Dewey;J. Kavalieros;B. Jin;M. Metz;A. Majumdar;M. Radosavljevic

  • Author_Institution
    Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Firstpage
    26
  • Abstract
    Sustaining Moore´s Law requires continual transistor miniaturization. Through silicon innovations and breakthroughs, CMOS transistor scaling and Moore´s Law will continue at least through early next decade. By combining silicon innovations with other nanotechnologies on the same Si platform, it is expected that Moore´s Law will extend well into the next decade. This paper describes the most recent advances made in silicon CMOS transistor technology and discusses the challenges and opportunities presented by the recent emerging nanoelectronic devices such as carbon nanotubefield-effect transistors (FET), Si-nanowire FETs and III-V FETs for high-performance, low-power logic applications.
  • Keywords
    "Transistors","Nanotechnology","CMOS logic circuits","Moore´s Law","Silicon","FETs","Technological innovation","CMOS technology","Nanoscale devices","Carbon nanotubes"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1434947
  • Filename
    1434947