• DocumentCode
    3619447
  • Title

    Performance limits of deep submicron buried channel delta doped MOSFETs

  • Author

    K. Diawuo;A.G. O´Neill

  • Author_Institution
    University of Newcastle, UK
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    644
  • Lastpage
    647
  • Keywords
    "MOSFETs","Doping","Atomic layer deposition","Silicon germanium","Germanium silicon alloys","Threshold voltage","Computer simulation","Electrostatics","Leakage current","Cutoff frequency"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194511
  • Filename
    1503441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619447