• DocumentCode
    3619461
  • Title

    Two-stage degradation of submicron LDD n-MOSFETs by 1/f noise, charge pumping, and drain current measurements

  • Author

    S. Okhonin;L. Ren;M. Ilegems

  • Author_Institution
    Swiss Federal Institute of Technology, Switzerland
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    700
  • Lastpage
    703
  • Keywords
    "Degradation","MOSFET circuits","Charge pumps","Current measurement","Charge measurement","Noise measurement","Stress","Low-frequency noise","Hot carriers","Voltage"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194525
  • Filename
    1503455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619461