• DocumentCode
    3619501
  • Title

    Plasma-Induced Nitridation of the Gate Oxide Dielectrics: Linked Equipment-Feature-Atomic Scale Simulations

  • Author

    V. Sukharev;S. Aronowitz;V. Zubkov;H. Puchner;J. Haywood;J. Kimball

  • Author_Institution
    LSI Logic Corporation, Santa Clara, CA, United States
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    620
  • Lastpage
    623
  • Keywords
    "Plasma simulation","Nitrogen","Plasma sources","Inductors","Atomic layer deposition","CMOS technology","Boron","Employment","Dielectric films","Plasma temperature"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619501