• DocumentCode
    3619510
  • Title

    Using the Self Aligned Field Implant to Design High Voltage Devices in Sub- µm CMOS Technologies

  • Author

    M. Vermandel;J. Doutreloigne;P. Moens;M. Tack

  • Author_Institution
    University of Gent, Belgium
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    228
  • Lastpage
    231
  • Keywords
    "CMOS technology","Implants","Electric breakdown","Diodes","Microelectronics","Breakdown voltage","CMOS process","Doping","Low voltage","Automotive engineering"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194756
  • Filename
    1503686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619510