• DocumentCode
    3619519
  • Title

    NO post annealed oxide versus re-oxidised NO oxide

  • Author

    S. Kubicek;M. Schaekers;A. De Keersgieter;E. Augendre;G. Badenes;K. De Meyer

  • Author_Institution
    IMEC, Leuven, Belgium and KU Leuven, Belgium
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    264
  • Lastpage
    267
  • Keywords
    "Annealing","Nitrogen","MOS devices","MOSFETs","Dielectrics","Degradation","Boron","CMOS technology","Electron mobility","Hot carriers"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194765
  • Filename
    1503695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619519