• DocumentCode
    3619750
  • Title

    Space-charge limited free carrier transport in semi-insulating III-V compounds

  • Author

    M. Sudzius;A. Kadys;K. Jarasiunas

  • Author_Institution
    Dept. of Semicond. Optoelectron., Vilnius Univ., Lithuania
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    11
  • Lastpage
    14
  • Abstract
    We demonstrate a novel way to analyse carrier recombination and transport processes in photorefractive semiconductors via kinetics and exposure characteristics of light induced diffraction. The results of a picosecond degenerate four-wave mixing on free carrier gratings in semi-insulating GaAs and InP bulk crystals are discussed. The role of a deep trap recharging in carrier diffusion and recombination is sensitively revealed through a feedback effect of a space-charge field to nonequilibrium carrier transport or directly through linear electrooptic effect.
  • Keywords
    "III-V semiconductor materials","Radiative recombination","Photorefractive effect","Kinetic theory","Diffraction","Four-wave mixing","Gratings","Gallium arsenide","Indium phosphide","Crystals"
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
  • Print_ISBN
    0-7803-8668-X
  • Type

    conf

  • DOI
    10.1109/SIM.2005.1511374
  • Filename
    1511374