Computer model for simulation of amorphous silicon solar cell structures

A computer model for a simulation of heterostructure solar cells based on a variety of physical models is discussed. In comparison with earlier and less general computer models, advantages of the author´s ASPIN model are pointed out in the context of an analysis of various a-Si:H p-i-n solar cell structures, where their internal properties and external characteristics are mutually compared. The interest was directed to p-i-n structures with different front layer mobility gap (homostructure a-Si:H and heterostructure a-Si:C:H/a-Si:H). Among heterostructures effect of different p-i heterojunction transition (abrupt and graded) and the influence of an improved back contact are discussed.