• DocumentCode
    3624478
  • Title

    Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

  • Author

    M. Tapajna;K. Husekova;K. Frohlich;E. Dobrocka;F. Roozeboom

  • Author_Institution
    Institute of Electrical Engineering, Centre of Excellence CENG, SAS, D?bravsk? cesta 9, 841 04 Bratislava, Slovakia
  • fYear
    2006
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    The authors have studied the leakage characteristics of Ru/HfxSi 1-xOy/Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O2. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode
  • Keywords
    "MOS capacitors","Hafnium","Dielectrics","Electrodes","CMOS technology","Temperature distribution","Annealing","X-ray diffraction","Reflectivity","Capacitance-voltage characteristics"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331144
  • Filename
    4133068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624478