DocumentCode
3624494
Title
GaAs and GaN based SAW chemical sensors: acoustic part design and technology
Author
L. Rufer;T. Lalinsky;D. Grobelny;S. Mir;G. Vanko;Zs. Oszi;Z. Mozolova;J. Gregus
Author_Institution
TIMA Laboratory, 46 Av. F?lix Viallet, 38 031 Grenoble, France. e-mail: Libor.Rufer@imag.fr
fYear
2006
Firstpage
165
Lastpage
168
Abstract
In this paper, we present the design considerations and the technology process of SAW (surface acoustic wave) chemical sensors based either on GaAs or GaN structures. These sensors can be used for identifying environmental contaminants and chemical or biological agents in large applications scale; in this study, we aimed at the measurement of low concentrations of gaseous mercury. We describe the design of the acoustic part of the sensor including the structure for the generation and reception of the surface acoustic wave and the chemoselective coating made of gold. We show the technology process that achieves the device operating at the frequency of 250 MHz. Finally we present some preliminary results obtained from the device
Keywords
"Gallium arsenide","Gallium nitride","Surface acoustic waves","Chemical sensors","Chemical technology","Chemical and biological sensors","Surface contamination","Acoustic waves","Biosensors","Acoustic sensors"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331180
Filename
4133104
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