• DocumentCode
    3627830
  • Title

    Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

  • Author

    A. Sevcenco;G. Brezeanu;M. Badila;F. Draghici;I. Rusu;A. Visoreanu

  • Author_Institution
    University Politehnica Bucharest, Romania
  • Volume
    2
  • fYear
    2007
  • Firstpage
    551
  • Lastpage
    554
  • Abstract
    The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is proven to be accurate in all predictions regarding the effect of velocity saturation on the parameters of nanoscale MOSFET: transconductance, transitions currents, etc. Experimental transfer characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries.
  • Keywords
    "Analytical models","MOSFETs","Voltage","Semiconductor device modeling","Geometry","Electric variables","CMOS process","Electronic mail","Predictive models","Transconductance"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2007. CAS 2007. International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-0847-4
  • Electronic_ISBN
    2377-0678
  • Type

    conf

  • DOI
    10.1109/SMICND.2007.4519783
  • Filename
    4519783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3627830