A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

Author

Qian Wu ; Bayerl, A. ; Porti, M. ; Martin-Martinez, J. ; Lanza, Mario ; Rodriguez, Roberto ; Velayudhan, V. ; Nafria, M. ; Aymerich, X. ; Bargallo Gonzalez, Mireia ; Simoen, Eddy

Author_Institution

Dept. Eng. Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3118

Lastpage

3124

Abstract

This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain.

Keywords

MOSFET; atomic force microscopy; hot carriers; negative bias temperature instability; stress analysis; CAFM; CHC stresses; MOSFET gate dielectric; bias temperature instability; channel hot-carrier stresses; conductive atomic force microscope; electrical stresses; gate oxide; nanoscale electrical properties; negative BTI stress; Current measurement; Degradation; Dielectrics; Logic gates; MOSFET; Nanoscale devices; Stress; Atomic force microscopy (AFM); MOSFET; channel hot-carrier (CHC) degradation; negative bias temperature instability (NBTI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2341315

Filename

6880443