Modeling of minority-carrier transport at silicon graded n-n/sup +/ junctions. I. Theory

In this paper we present a derivation of the set of two generalized differential equations for the calculation of the minority-carrier surface recombination velocity and excess carrier concentration in the silicon diode containing graded nn/sup +/ junction. These equations are developed for all injection levels. Since their derivation is carried out by taking into account heavy doping effects, they are assumed to be valid for a wide range of doping profiles.