• DocumentCode
    3631418
  • Title

    Design of a high gain power amplifier using a bias dependent large signal MESFET model and the describing function technique

  • Author

    S. Munoz;J.L. Sebastian;J.D. Gallego

  • Author_Institution
    Fac. de Ciencias Fisicas, Univ. Complutense de Madrid, Spain
  • fYear
    1995
  • Firstpage
    455
  • Lastpage
    458
  • Abstract
    A MESFET microwave power amplifier has been designed using a large-signal quasi-static model with bias dependent elements. This model has been derived from experimental S parameters and dc measurements. The analysis and gain optimization of the amplifier is performed by using the describing function technique. Optimum bias device conditions in C class are obtained for maximum gain. Experimental results show an excellent agreement with the theoretical analysis.
  • Keywords
    "Signal design","MESFETs","Equivalent circuits","Scattering parameters","Voltage","Capacitance","Frequency","Power amplifiers","Performance analysis","Performance gain"
  • Publisher
    ieee
  • Conference_Titel
    Signals, Systems, and Electronics, 1995. ISSSE ´95, Proceedings., 1995 URSI International Symposium on
  • Print_ISBN
    0-7803-2516-8
  • Type

    conf

  • DOI
    10.1109/ISSSE.1995.498030
  • Filename
    498030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631418