Photoacoustic determination of ambipolar transport parameters in semiconductors under applied electric field

In this paper the possibility of photoacoustic determination of semiconductor ambipolar transport parameters is shown. Semiconductor surface temperature variations are calculated for the case of a d.c. electric field applied parallel to the sample surface. At sufficiently high modulation frequencies of the excitation light beam the photoacoustic signal amplitude exhibits a linear dependence on the square of applied field intensity, with the proportionality constant depending on the excess carrier ambipolar mobility and recombination lifetime. The method for determination of semiconductor transport parameters from this linear slope is discussed.