A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors

The paper presents a method for exact separation of interface trap density effects in the presence of large border trap density after irradiation of MOS devices. It is based on the standard subthreshold technique, but applies special measurement procedure which eliminates the drifts produce by border traps via the tunneling effect. The method is demonstrated on pMOS dosimetric transistor and it is shown that it gives different and, we claim, better estimate of interface trap density than standard technique.