• DocumentCode
    3631483
  • Title

    High temperature storage life (HTSL) and high temperature reverse bias (HTRB) reliability testing of power VDMOSFETs

  • Author

    N. Tosic;B. Pesic;N. Stojadinovic

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    1
  • fYear
    1995
  • Firstpage
    285
  • Abstract
    This paper presents results of reliability investigation of power VDMOSFETs, encapsulated in both plastic and metal packages, obtained by High Temperature Storage Life (HTSL) and High Temperature Reverse Bias (HTRB) tests. The behaviour of DC parameters (drain current, leakage current, threshold voltage, gain factor, ON-resistance and breakdown voltage) during the reliability testing is monitored and analysed in view of comparison of the effects of the temperature and bias applied on power VDMOSFETs reliability.
  • Keywords
    "Temperature","Life testing","MOSFETs","Degradation","Plastic packaging","Leakage current","Threshold voltage","Monitoring","Power supplies","Driver circuits"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500882
  • Filename
    500882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631483