Non-quasi-static bipolar transistor models for circuit simulators

The novel one-dimensional non-quasi static bipolar junction transistor model for circuit simulator, based on the transmission line equivalent circuit representation of quasi-neutral regions, is described. It is compared with the most recent non-quasi static Wu and Lindholm (1989) and Seitchik et al. (1987) bipolar transistor models. Good agreement of the simulated large and small signal results is obtained between various models, of which the novel transmission line model appears to be the most accurate one.