Parameter extraction of HEMT models from multibias s-parameters

The aim of the paper is to show how to identify the parameters of various nonlinear circuit models of a high electron mobility transistor from the multibias S-parameter dataset measured on a pHEMT device. A three-step identification procedure is described that uses tested optimization methods. Two original model modifications are suggested based on empirical relations for the transconductance dependence on gate-source voltage. Various models including the modified ones are compared in terms of the root-mean-square errors of multibias S-parameters.