Modification of detection process on ZnO sensors by ultraviolet radiation

The contribution deals with influence of radiation in the near UV region (λ = 396 nm) on detection properties of conductive type gas sensors. The ZnO active layers of the sensors were deposited on Alumina substrates by Pulsed Laser Deposition method. Resulting thickness of active layers was ∼ 450 nm. The dc-sensitivity was evaluated from resistance change under exposition of hydrogen and acetone and toluene vapours in synthetic air. The sensitivity to acetone was doubled using the UV radiation at 250°C.