DocumentCode
3635004
Title
Silicon power Schottky diodes model implemented in SPICE
Author
Jacek Dąbrowski;Janusz Zarębski
Author_Institution
Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225 Gdynia, Poland
fYear
2008
Firstpage
173
Lastpage
176
Abstract
The paper deals with the problem of modelling d.c. characteristics of silicon power Schottky diodes with thermal effects taken into account. The electrothermal model of the investigated diodes was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected Schottky diode.
Keywords
"Schottky diodes","SPICE","Integrated circuit modeling","Computational modeling","Voltage measurement","Isothermal processes"
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2008 Proceedings of International Conference on
Print_ISBN
978-966-553-678-9
Type
conf
Filename
5423566
Link To Document