Impact of random telegraph signals on Vmin in 45nm SRAM

An alternating-bias random telegraph signal (RTS) characterization technique is presented, which shortens measurement time by 10? and also produces more accurate statistical distributions of RTS amplitudes. Measurements of RTS amplitudes in 45 nm SRAM transistor I_ds and cell write margin are reported and used to demonstrate a complex dependence of write margin on RTS in multiple transistors. Fail bit rate of SRAM with RTS is estimated using a statistical model populated by I_write measurements. Statistical analysis indicates a V_min degradation of less than 50 mV due to RTS.