Millimeter wave application for non-destrucive homogenety characterization of semiconductor and dielectric wafers

Millimeter wave technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing plate shape material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. Results of the homogeneity measurements for some semiconductor and dielectric wafers are presented. The measurement technique sensitivity is discussed.