DocumentCode
3637425
Title
Simple electroabsorption model for silicongermanium/germanium quantum well devices
Author
Rebecca K. Schaevitz;Jonathan E. Roth;Elizabeth H. Edwards;Ross M. Audet;Stephanie A. Claussen;Emel Taşyürek;Shen Ren;Yiwen Rong;James S. Harris;David A. B. Miller
Author_Institution
Edward L. Ginzton Laboratories, Stanford University, Stanford, CA
fYear
2010
Firstpage
219
Lastpage
220
Abstract
We present a simple model for the electroabsorption spectrum of germanium-based quantum wells, which can be used to optimize material design for modulators. The model gives very good agreement with our new experimental data.
Keywords
"Absorption","Electric fields","Silicon germanium","Excitons","Modulation","Computational modeling"
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2010 IEEE
Print_ISBN
978-1-4244-3730-6
Type
conf
DOI
10.1109/PHOSST.2010.5553693
Filename
5553693
Link To Document