• DocumentCode
    3637425
  • Title

    Simple electroabsorption model for silicongermanium/germanium quantum well devices

  • Author

    Rebecca K. Schaevitz;Jonathan E. Roth;Elizabeth H. Edwards;Ross M. Audet;Stephanie A. Claussen;Emel Taşyürek;Shen Ren;Yiwen Rong;James S. Harris;David A. B. Miller

  • Author_Institution
    Edward L. Ginzton Laboratories, Stanford University, Stanford, CA
  • fYear
    2010
  • Firstpage
    219
  • Lastpage
    220
  • Abstract
    We present a simple model for the electroabsorption spectrum of germanium-based quantum wells, which can be used to optimize material design for modulators. The model gives very good agreement with our new experimental data.
  • Keywords
    "Absorption","Electric fields","Silicon germanium","Excitons","Modulation","Computational modeling"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Society Summer Topical Meeting Series, 2010 IEEE
  • Print_ISBN
    978-1-4244-3730-6
  • Type

    conf

  • DOI
    10.1109/PHOSST.2010.5553693
  • Filename
    5553693