Efficient multi-VT FDSOI technology with UTBOX for low power circuit design

For the first time, Multi-VT UTBOX-FDSOI technology for low power applications is demonstrated. We highlight the effectiveness of back biasing for short devices in order to achieve ION current improvement by 45% for LVT options at an IOFF current of 23nA/µm and a leakage reduction by 2 decades for the HVT one. In addition, fully functional 0.299um² bitcells with 290mV SNM at 1.1V and Vb=0V operation were obtained. We also demonstrate on ring oscillators and 0.299µm² SRAM bitcells the effectiveness (ΔVT versus Vb ∼ 208mV/V) of the conventional bulk reverse and forward back biasing approaches to manage the circuit static power and the dynamic performances.