DocumentCode
3638021
Title
Simple electroabsorption model for germanium quantum well devices
Author
Rebecca K. Schaevitz;Elizabeth H. Edwards;Ross M. Audet; Yiwen Rong;Shen Ren;Stephanie A. Claussen;Emel Tasyürek;Jonathan E. Roth;James S. Harris;David A. B. Miller
Author_Institution
Edward L. Ginzton Laboratories, Stanford University, CA 94305-4088, USA
fYear
2010
Firstpage
109
Lastpage
110
Abstract
We present a simple electroabsorption model for germanium quantum wells to facilitate optical modulator design. We show this model is valid for a range of well sizes with an increased exciton-enhanced absorption for thinner wells.
Keywords
"Absorption","Electric fields","Excitons","Silicon germanium","Modulation","Voltage measurement"
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
ISSN
2158-3234
Print_ISBN
978-1-4244-7016-7
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2010.5595641
Filename
5595641
Link To Document