Effects of /spl mu/c-Si p-layer on p-i-n a-Si:H solar cell performance

Using the ASPIN numerical simulator, the function of a p(/spl mu/c-Si) layer in the p-i-n a-Si:H solar cell front contact was examined. In the analysis of ZnO/p(/spl mu/c-Si)-i-n structure, three parameter sets were chosen with the aim to verify the validity of the reported measured material parameters. The results revealed that the correct setting of p(/spl mu/c-Si) work function is of prime importance. Analysis of a double window layer with inserted p(a-SiC:H) layer and accompanying i(a-SiC:H) buffer layer in the ZnO/p(/spl mu/c-Si)-i-n structure shows that the buffer layer beneficially affects; the short-circuit current and fill factor and furthermore, the insertion of few nanometers thick p(a-SiC:H) additionally improves the solar cell performance.