DocumentCode
3639073
Title
Using the Coherence Correlation Interferometry (CCI) technique for study topography of the C-Ni films deposited on porous silicon
Author
M. Suchańska;M. Makrenek;J. Świderski
Author_Institution
Division of Photonics and Electronic Nanomaterials, Kielce University of Technology, Al. 1000-Lecia PP No 7, 25-314, Poland
Volume
2
fYear
2010
Firstpage
367
Lastpage
370
Abstract
Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.
Keywords
"Scanning electron microscopy","Silicon","Films","Correlation","Coherence"
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5649092
Filename
5649092
Link To Document