• DocumentCode
    3641380
  • Title

    Thermawave/sup TM/ and substrate considerations for low dose implants

  • Author

    R.M. Lee;M.D.S. Castle;N.L.H. Clarke;G. De Cock;T. Romig

  • Author_Institution
    Appl. Materials, Austin, TX, USA
  • fYear
    1996
  • Firstpage
    498
  • Lastpage
    500
  • Abstract
    The condition of the silicon substrate prior to implant can have a significant effect on the Thermawave/sup TM/ (TW) readings for a low dose implant. This study looks at the repeatability and uniformity of a series of cumulative implants run on a PI9500/spl times/R implanter and the influence of the silicon substrate on the TW results. The affect on manufacturing trend data is also discussed.
  • Keywords
    "Implants","Silicon","Boron","Substrates","Testing","Rapid thermal annealing","Semiconductor materials","Metrology","Manufacturing industries","Rapid thermal processing"
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586410
  • Filename
    586410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3641380