Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors

A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of ungated regions on high-frequency (HF) noise is considered. An efficient suppression of HF noise is found to take place in the case of additional ungated region placed between the gate and drain contacts.