DocumentCode
3643781
Title
Elimination of an impact of mechanical stresses on an operation of nitride light-emitting diodes
Author
S. Morawiec;R. P. Sarzała;W. Nakwaski
Author_Institution
Photonics Group, Institute of Physics, Technical University of Lodz, ul. Wolczanska 219, 90-924 Lodz, Poland
fYear
2011
Firstpage
79
Lastpage
80
Abstract
In designing of nitride light-emitting diodes, the semi-polar InAlGaN substrate is proposed to fully eliminate polarization effects.
Keywords
"Substrates","Gallium nitride","Light emitting diodes","Lattices","Crystals","Tensile stress"
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
ISSN
2158-3234
Print_ISBN
978-1-61284-876-1
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2011.6041148
Filename
6041148
Link To Document