• DocumentCode
    3643781
  • Title

    Elimination of an impact of mechanical stresses on an operation of nitride light-emitting diodes

  • Author

    S. Morawiec;R. P. Sarzała;W. Nakwaski

  • Author_Institution
    Photonics Group, Institute of Physics, Technical University of Lodz, ul. Wolczanska 219, 90-924 Lodz, Poland
  • fYear
    2011
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    In designing of nitride light-emitting diodes, the semi-polar InAlGaN substrate is proposed to fully eliminate polarization effects.
  • Keywords
    "Substrates","Gallium nitride","Light emitting diodes","Lattices","Crystals","Tensile stress"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-61284-876-1
  • Electronic_ISBN
    2158-3234
  • Type

    conf

  • DOI
    10.1109/NUSOD.2011.6041148
  • Filename
    6041148