Electronic and structural properties of amorphous N-doped silicone carbide

Amorphous silicon carbide/nitride (a - SiC(N)) films were prepared by PECVD technology in capacitive parallel plate plasma reactor. A gas mixture of SiH₄, CH₄ and NH₃ was directly introduced into the reaction chamber through a shower head. Properties of thus produced films were studied by electrical measurement. Forward (FW) and reverse (RV) current-voltage (IV) characteristics (Al - SiC(N)/Si-Al structures), CV characteristics are shown in this paper. Calculated and measured parameter as refractivity index, thickness, factor ideality, saturation current, are included in this work. Identification of bonds at surface of amorphous layers by FTIR was presented.