• DocumentCode
    3647106
  • Title

    Characterization of test devices for development of nanowire sensor FETs

  • Author

    Michał Zaborowski;Daniel Tomaszewski;Andrzej Panas;Piotr Grabiec

  • Author_Institution
    Institute of Electron Technology, Warsaw, Poland
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    407
  • Lastpage
    411
  • Abstract
    Characterization of gate-less nanowire (NW) sensor devices by means of test devices of similar geometry, equipped with metal gate electrode, has been proposed in the paper. Details of NW n-FET technology and microscope verification are presented. IDS(VGS) and IDS(VDS) DC characteristics have been measured and discussed in relation to a channel implanted phosphorus dose. 2-fin, 8-fin and 32-fin FETs have been compared using a normalization to the single fin device. A spread of NW devices characteristics and an influence of positive or negative incrementation of the voltage have been investigated. Conclusions related to sensor development have been drawn.
  • Keywords
    "Logic gates","FETs","Silicon","Nanoscale devices","Dielectric measurements","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
  • Print_ISBN
    978-1-4577-2092-5
  • Type

    conf

  • Filename
    6226225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647106