Low frequency noise characterisation of biased silicon CMOS terahertz detectors

An investigation of the low-frequency noise and responsivity characteristics of silicon 0.15-μm-MOSFET-based detectors for terahertz radiation under applied dc source-to-drain current has been carried out. It is shown that the base noise of the investigated transistors is thermal channel noise at higher frequencies, while at lower frequencies, generation-recombination and 1/f-type noise prevail over thermal fluctuations. Characteristic times of the observed generation-recombination processes are in the range from 80 μs to 1.6 ms.