Simulation and characterization of GaN HEMT in high-frequency switched-mode power converters

High switching frequencies can lead to converters with reduced size and high power density. Using RF/microwave devices, microwave design techniques can be applied to allow soft-switching of devices and thus high efficiency operation, at the cost of higher complexity and component count. This paper explores the use of microwave GaN High Electron Mobility Transistors (HEMT) to realize power conversion in the 10-100 MHz range using conventional PWM techniques that may enable simple, small and efficient converters. Several driver and test circuits are described, simulated and tested, and experimental results are also provided for a floating buck converter operating at 20 MHz and controlled using conventional PWM techniques.