Properties of a T-shaped quantum interference ´transistor´ as an electronic device

The current-voltage characteristics and relevant parameters of a T-shaped quantum interference transistor in the nonlinear regime are theoretically and numerically examined. Possible properties of such mesoscopic device as an amplification or switching device are discussed. Non-ideal transistors, with impurities and rough boundaries are also considered. The zero-temperature I-V characteristics both for ideal and disordered devices are with multiple peaks and exhibit regions of negative differential resistance. The calculated values of the transconductance and the differential drain conductance are small (of the order of /spl plusmn/2e/sup 2//h), which suggests a limited ability for conventional applications of this type of transistor.