Low-voltage current sensor design in 90 nm CMOS technology

An on-chip current monitor designed in 90 nm CMOS technology is addressed. Proposed circuit exhibits wide temperature operating range as well as the stability over the process corners. First part of the article describes the theoretical background of employed design technique. Second part addresses proposed sensor topology and achieved parameters for a specific design. Finally, conclusion as well as the future plans and possible application area are presented in the last sections.