DocumentCode
3648987
Title
160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
Author
S. Piotrowicz;O. Jardel;J.-C. Jacquet;D. Lancereau;R. Aubry;E. Morvan;N. Sarazin;J. Dufraisse;C. Dua;M. Oualli;E. Chartier;M. A. Di-Forte Poisson;C. Gaquière;S. L. Delage
Author_Institution
III-V Lab., Alcatel-Thales, France
fYear
2012
Firstpage
1
Lastpage
4
Abstract
We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.
Keywords
"Gallium nitride","Power amplifiers","HEMTs","MODFETs","Power generation","Thermal resistance","Current measurement"
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
ISSN
1550-8781
Print_ISBN
978-1-4673-0928-8
Type
conf
DOI
10.1109/CSICS.2012.6340059
Filename
6340059
Link To Document